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| www..com DC COMPONENTS CO., LTD. R DC9015 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in pre-amplifier of low level and low noise. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -50 -45 -5 -100 450 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -50 -45 -5 -0.6 60 100 2% Typ -0.2 -0.82 -0.65 190 4.5 Max -50 -50 -0.7 -1 -0.75 1000 7 Unit V V V nA nA V V V MHz pF Test Conditions IC=-100A, IE=0 IC=-1mA, IB=0 IE=-100A, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA IC=-2mA, VCE=-5V IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V VCB=-10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) VCE(sat) VBE(sat) VBE(on) hFE fT Cob 380s, Duty Cycle Classification of hFE Rank Range A 60~150 B 100~300 C 200~600 D 400~1000 |
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